Robust weak antilocalization due to spin-orbital entanglement in Dirac material Sr3SnO

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Last updated 12 novembro 2024

Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressively strained germanium semiconductor on silicon

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Multiple electron & phonon scattering effect achieves highly efficient thermoelectricity due to nanostructuring - ScienceDirect

PDF) Robust weak antilocalization due to spin-orbital entanglement in Dirac material Sr3SnO

Multiple electron & phonon scattering effect achieves highly efficient thermoelectricity due to nanostructuring - ScienceDirect

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Robust weak antilocalization due to spin-orbital entanglement in Dirac material Sr3SnO

Time evolution of the quadrature squeezing of the phonon field ΔX2. The

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Evolution of Fermi surface in Sr3SnO with EF obtained by

PDF) Robust weak antilocalization due to spin-orbital entanglement in Dirac material Sr3SnO

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